A process for large-scale production of cdte/cds thin film...

H - Electricity – 01 – L

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H01L 31/18 (2006.01)

Patent

CA 2601749

A process for the large-scale production of CdTe/CdS thin film solar cells, said films being deposited as a sequence on a transparent substrate, comprising the steps of : depositing a film of a transparent conductive oxide (TCO) on said substrate; depositing a film of CdS on said TCO film; depositing a film of CdTe on said CdS film; treating said CdTe film with a Chlorine- containing inert gas; depositing a back-contact film on said treated CdTe film. The Chlorine -containing inert gas is a Chlorof luorocarbon or a Hydrochlorof luorocarbon product and the treatment is carried out in a vacuum chamber at an operating temperature of 380-4200C. The Chlorine released as a result of the thermal dissociation of the product reacts with solid CdTe present on the cell surface to produce TeCl2 and CdCl2 vapors. Any residual CdCl2 is removed from the cell surface by applying vacuum to the vacuum chamber while keeping the temperature at the operating value.

L'invention concerne un procédé pour produire à grande échelle des films minces de cellules solaires CdTe/CdS. Ces films sont déposés, en séquences, sur un substrat transparent. Le procédé de l'invention comprend les étapes consistant à: déposer un film d'oxyde conducteur transparent (TCO) sur le substrat; déposer un film de CdS sur le film TCO; déposer un film de CdTe sur le film CdS; traiter le film CdTe à l'aide d'un gaz inerte contenant du chlore; déposer un film formant un contact de repos sur le film CdTe. Le gaz inerte contenant du chlore est un chlorofluorocarbone ou un produit d'hydrochlorofluorocarbone et le traitement est effectué dans un compartiment sous vide, à une température de fonctionnement comprise entre 380 et 4200 °C. Le chlore libéré en tant que résultat de la dissociation thermique du produit réagit avec le CdTe solide présent sur la surface de la cellule pour produire des vapeurs de TeCl2 et de CdCl2. Tout résidu de CdCl2 est retiré de la surface de la cellule par une application de vide dans le compartiment sous vide, la température à étant maintenue à sa valeur de fonctionnement.

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