A quatum barrier semiconductor optical device

Details A quatum barrier semiconductor optical device A quatum barrier semiconductor optical device

H - Electricity

01

S

H01S 5/20 (2006.01) H01S 5/343 (2006.01) H01S 5/32 (2006.01) H01S 5/323 (2006.01) H01S 5/34 (2006.01)

Patent

CA 2055208

The quantum barrier semiconductor optical devices according to this invention are characterized by strained layer super lattice multiple quantum barriers provided between active layer and p-clad layer or within p-clad layer to obtain resonance scattering of incident overflowing electrons, that is to realize phase condition in which the incident overflowing electron wave and reflected electron wave enhance each other, in the double hetero-structure where active layer having at least one GaInAs(P) layer is sandwiched between n-clad layer and p-clad layer. In this case, the actives layer should desirably have quantum well structure. The quantum barrier semiconductor optical device comprises a DCC type double hetero-structure made by growing an n-clad layer, a first active layer having at least one GaInAs(P) sub-layer, a middle clad layer, a second active layer having at least one GaInAs(p) sub-layer, and a p-clad layer in the order of mention or vice versa and a super lattice resonance scattering type quantum barriers provided between the first active layer and middle clad layer or in the middle clad layer and/or between the second active layer and p-clad layer or within p-clad layer. In this case also, the active layer should desirably have quantum well structure and the quantum barriers should desirably be made up of strained layer super lattice.

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