A semiconductor device with a passivation film

Details A semiconductor device with a passivation film A semiconductor device with a passivation film

H - Electricity

01

L

H01L 29/12 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01)

Patent

CA 2213034

The invention provides a semiconductor device (2) with a passivation film (3,9) provided on a surface thereof, said passivation film (3,9) comprising a SiON layer (4, 10) being in contact with the surface of said semiconductor device (2), and a Si3N4 layer (5,11) provided at the outer side of said SiON layer (4,10), chraracterized in that said passivation film (3,9) has an outermost layer (11) of Si3N4 and said outermost layer (11) has a portion being in contact with said semiconductor device (2), or the exposed area (111, 112) of said SiON layer (107) is nitrided. The semiconductor device has a high bonding strength between the passivation film and the semiconductor device and high moisture resistance.

Dispositif semiconducteur (2) comportant un film de passivation (3,9) sur une de ses surfaces; le film de passivation (3,9) comprend une couche de SiON (4,10) en contact avec la surface du dispositif semiconducteur (2), et une couche de Si3N4 (5,11) sur le côté extérieur de la couche de SiON (4,10); le film de passivation (3,9) comporte une couche extérieure (11) de Si3N4 dont une partie est en contact avec le dispositif semiconducteur (2); sinon la zone exposée (111, 112) de la couche de SiON (107) est nitrurée. Le dispositif semiconducteur présente une forte adhésion au niveau du film de passivation et une résistance élevée à l'humidité.

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