A semiconductor photodiode and an optical receiver

Details A semiconductor photodiode and an optical receiver A semiconductor photodiode and an optical receiver

H - Electricity

01

L

H01L 31/04 (2006.01) H01L 23/48 (2006.01) H01L 27/14 (2006.01) H01L 27/15 (2006.01) H01L 31/10 (2006.01) H01L 31/102 (2006.01) H01L 31/105 (2006.01) H04B 10/06 (2006.01)

Patent

CA 2361311

The present invention relates to a high-sensitivity top-electrode and bottom- illuminated type photodiode. The device consists of a highly doped buffer layer, a photo-detecting layer on a semi-insulating substrate. An electrode is formed on the conductive domain that is formed in the photo-detecting layer, and another electrode is formed on the partly exposed peripheral area of the highly-doped buffer layer by removing a part of the photo-detecting layer. As the semi-insulating substrate absorbs less light in the substrate, a decrease of sensitivity by the substrate absorption can be prevented.

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