A substrate for high frequency integrated circuits

Details A substrate for high frequency integrated circuits A substrate for high frequency integrated circuits

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 21/18 (2006.01) H01L 21/285 (2006.01) H01L 21/288 (2006.01) H01L 21/762 (2006.01) H01L 29/06 (2006.01) H01L 29/32 (2006.01)

Patent

CA 2294290

A silicon substrate material based on silicon has a semi-insulating interior layer (5) isolating the bulk of the substrate material from the top layers (7), where integrated circuits are to be built. The semi-insulating layer is created by producing submicron particles having Schottky barriers or pn-hetero- barriers and distributing the particles so that the depletion regions then produced around neighbouring particles overlap. Such particles will then deplete the silicon material from electric charge carriers. The substrate material can then be processed using the standard silicon processing methods and allows integrated circuits to be manufactured which are suitable for high frequency applications. A silicon substrate is made by sputtering a metal such as Co in a silicon wafer (1) and then silicidizing the sputtered Co atoms by means of an annealing treatment. A top silicon wafer (11) having a silicon dioxide layer (13) at its bottom surface is then bonded to the sputtered layer. Finally the top wafer (11) is thinned to provide a layer thickness suitable for the processing steps required in the manufacture of components.

Substrat à base de silicium possédant une couche intérieure semi-isolante (5) isolant la masse du matériau du substrat des couches supérieures (7), sur lesquelles on constitue les circuits intégrés. On crée cette couche semi-isolante au moyen de particules inférieures au micron comportant des barrières de Schottky ou des hétéro-barrières-pn et on distribue ces particules, de sorte que les zones d'appauvrissement qui se sont produites autour des particules avoisinantes se chevauchent. Ces particules appauvriront ensuite le silicium depuis les supports de charge électrique. On peut traiter le matériau du substrat au moyen de procédés normalisés de traitement du silicium et fabriquer des circuits intégrés appropriés pour des mises en application haute fréquence. On fabrique un substrat au silicium par pulvérisation d'un métal, tel que Co, dans une tranche de silicium (1) et on met en oeuvre un traitement de recuit afin de rendre siliciure les atomes de Co pulvérisés. On fait ensuite adhérer à la couche pulvérisée une tranche supérieure de silicium (11) possédant une couche (13) de dioxyde de silicium au niveau de sa surface inférieure. On amincit enfin la tranche supérieure (11) afin d'obtenir une épaisseur de couche adéquate en vue des étapes de traitement nécessaires pour fabriquer des composants.

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