A1n bulk single crystal, semiconductor device using the same...

Details A1n bulk single crystal, semiconductor device using the same... A1n bulk single crystal, semiconductor device using the same...

C - Chemistry, Metallurgy

30

B

C30B 29/38 (2006.01) C30B 23/06 (2006.01)

Patent

CA 2719826

An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select, as a surface 1a of a hexagonal single crystal substrate serving as a seed crystal 1, a plane inclined at an angle of 10° to 80° with respect to the C-plane (Fig. 1(a)), and to grow an AlN single crystal 2 as a growth plane 2a on the surface 1a by a sublimation method (Fig. 1(b)).

L'invention concerne un monocristal massif d'AlN, qui, même si l'on utilise un monocristal d'une matière différente comme cristal, est exempt de défauts importants et présente une qualité supérieure. L'invention concerne aussi un procédé de production du monocristal massif d'AlN et un dispositif semi-conducteur. Le procédé de production est caractérisé par les étapes consistant à: sélectionner un plan incliné de 10 à 80 degrés par rapport à un plan C comme surface (1a) d'un substrat de monocristal hexagonal constituant un germe cristallin (1) (Fig. 1 (a)), et faire croître un monocristal d'AlN (2) comme plan de croissance (2a) sur la surface(1a) par un procédé de sublimation (Fig. 1(b)).

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