A1n crystal and method of its growth

Details A1n crystal and method of its growth A1n crystal and method of its growth

C - Chemistry, Metallurgy

30

B

C30B 29/38 (2006.01) C30B 23/06 (2006.01)

Patent

CA 2675124

Disclosed is a method for growing an AlN crystal, which enables to stably grow an AlN crystal having large aperture and thickness. Specifically disclosed is a method for growing an AlN crystal, which comprises a step for preparing an SiC substrate (4) having a major surface (4m) wherein the density of micropipes (4mp) having a pipe diameter of not less than 1000 µm is 0 cm-2 and the density of micropipes (4mp) having a pipe diameter of not less than 100 µm but less than 1000 µm is not more than 0.1 cm-2, and a step for growing an AlN crystal (5) on the major surface (4m) by a vapor-phase process.

L'invention concerne un procédé pour faire croître un cristal d'AlN, lequel procédé permet de faire croître de façon stable un cristal d'AlN ayant une ouverture et une épaisseur importantes. De façon spécifique, l'invention concerne un procédé pour faire croître un cristal d'AlN, lequel procédé comprend une étape de préparation d'un substrat de SiC (4) ayant une surface principale (4m), dans laquelle la densité des microcanaux (4mp) ayant un diamètre de canal non inférieur à 1 000 µm est de 0 cm-2 et la densité des microcanaux (4mp) ayant un diamètre de canal non inférieur à 100 µm mais inférieur à 1000 µm n'est pas supérieure à 0,1 cm-2, et une étape de croissance d'un cristal d'AlN (5) sur la surface principale (4m) par un procédé en phase vapeur.

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