H - Electricity – 05 – K
Patent
H - Electricity
05
K
356/30
H05K 1/11 (2006.01) H01L 21/316 (2006.01) H01L 23/522 (2006.01) H05K 3/00 (2006.01)
Patent
CA 1075827
ABOVE AND BELOW GROUND PLANE WIRING Abstract of the Disclosure A fabrication method for integrated circuits is disclosed wherein a structure is formed on one side of a supporting substrate which provides a ground plane with "X" wiring on one side and "Y" wiring on the other side thereof. The method includes a number of alternative initial planarization steps which permits the resulting device to be substantially planar, thereby allowing it to be used as a substrate for preparation of high density integrated circuits. A first planarization step includes the deposition of a niobium thin film on a doped silicon substrate; the delineation of the desired niobium "X" wiring pattern using well-known photolithographic and etching techniques, leaving the photoresist in place to protect the niobium; the anodization of exposed silicon substrate portions to form silicon dioxide surrounding the niobium to a higher level then the niobium; and the removal of the photoresist. -1-
272258
Kircher Charles J.
Zappe Hans H.
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