G - Physics – 01 – N
Patent
G - Physics
01
N
324/29.9
G01N 27/30 (2006.01) G01K 13/00 (2006.01) G01N 27/12 (2006.01) H01C 17/06 (2006.01)
Patent
CA 1101068
ABSTRACT OF THE DISCLOSURE A humidity sensor comprising a sandwich of very thin permeable oxide between electrically conductive layers, in which a silicon chip provides a microscopically smooth base. In one embodiment an aluminum layer is built up on the base and a porous aluminum oxide layer is formed from that layer. In another embodiment, a layer of porous silicon dioxide is formed atop the silicon chip. A reliable sensor is thereby made from operations on readily available components.
287109
Chleck David J.
Goodman Philip
Kovac Michael G.
George H. Riches And Associates
Panametrics Inc.
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