Absolute humidity sensors and methods of manufacturing...

G - Physics – 01 – N

Patent

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324/29.9

G01N 27/04 (2006.01)

Patent

CA 1101069

ABSTRACT OF THE DISCLOSURE A method of forming a humidity sensor comprising a sandwich of very thin permeable oxide between electrically con- ductive layers, in which a silicon chip provides a microscopically smooth base. The method includes forming a porous SiO2 region atop the silicon chip, surrounded by a non-porous layer of SiO2.

356769

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