G - Physics – 01 – N
Patent
G - Physics
01
N
324/29.9
G01N 27/04 (2006.01)
Patent
CA 1101069
ABSTRACT OF THE DISCLOSURE A method of forming a humidity sensor comprising a sandwich of very thin permeable oxide between electrically con- ductive layers, in which a silicon chip provides a microscopically smooth base. The method includes forming a porous SiO2 region atop the silicon chip, surrounded by a non-porous layer of SiO2.
356769
Chleck David J.
Goodman Philip
Kovac Michael G.
George H. Riches And Associates
Panametrics Inc.
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