H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/18 (2006.01) G02F 1/017 (2006.01) H01L 21/20 (2006.01) H01L 21/26 (2006.01) H01L 31/0352 (2006.01) G02B 6/12 (2006.01)
Patent
CA 2149066
An in-situ method is disclosed for highly accurate lattice matching using reflection high energy electron diffraction dynamics. The method includes the steps of providing a substrate of a first semiconductor material and initiating growth of a second semiconductor material thereon. The oscillation amplitude of intensity I of waveform cycles is monitored using reflection high energy electron diffraction. A maximum intensity I+ and a minimum intensity I- is determined over a predetermined number of waveform cycles. The intensity drop .DELTA.I from initial reflectivity to minimum reflectivity of the waveform cycles is determined and a normalized figure of merit FM is calculated for the predetermined number of waveform cycles using the relationship: Image The fluxes of the second semiconductor material are then adjusted to maximize FM and optimize lattice matching. A multiple quantum well light modulator is also provided including a semiconductor substrate of InP, a multiple quantum well region, disposed above the InP substrate, composed of InGaAs and having a thickness of about 4 µm. The modulator is characterized by a lattice mismatch of less than 2 x 10-4.
Cunningham John Edward
Goossen Keith Wayne
Pathak Rajiv Nath
At&t Corp.
Kirby Eades Gale Baker
LandOfFree
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