Active linear sensor

H - Electricity – 04 – N

Patent

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Details

IPC codes

H04N 3/15 (2006.01)

Type

Patent

Patent number

CA 2323486

Description

A CMOS imager includes a photosensitive device such as a photodiode or photogate having a sense node coupled to an FET located adjacent to the photosensitive region. Another FET, forming a differential input pair of an operational amplifier is located outside of the array of pixels. The operational amplifier is configured for unity gain and a row or columm of input FETs is connected in parallel. A correlated double sampler is connected to the output of the operational amplifier for providing a fixed pattern noise free signal.

Un dispositif d'imagerie CMOS comprend un dispositif photosensible tel qu'une photodiode ou une grille photonique pourvue d'un noeud de détection, couplé à un transistor à effet de champ (TEC), placé adjacent à la région photosensible. Un autre TEC formant une paire d'entrées différentielles d'un amplificateur opérationnel est situé à l'extérieur de l'ensemble de pixels. L'amplificateur opérationnel est configuré pour un gain unitaire et une rangée ou une colonne de TEC d'entrée est montée en parallèle. Un dispositif de double échantillonnage corrélé est relié à la sortie de l'amplificateur opérationnel de façon à obtenir un signal clair de bruit stable.

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