Active matrix display screen using hydrogenated amorphous...

G - Physics – 02 – F

Patent

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G02F 1/133 (2006.01) G02F 1/1368 (2006.01) H01L 21/84 (2006.01) H01L 27/12 (2006.01) H01L 29/16 (2006.01) H01L 29/24 (2006.01)

Patent

CA 1278849

ABSTRACT OF THE DISCLOSURE The semiconductor making it possible to obtain thin film transistors is of hydrogenated amorphous silicon carbide. As this material is transparent, the stack constituted by the semiconductor and the insulant can be maintained over the entire wall, so that there is no need to expose the columns and blocks. Application to flat-faced screen displays.

542059

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