H - Electricity – 01 – F
Patent
H - Electricity
01
F
H01F 29/00 (2006.01) H03H 11/48 (2006.01)
Patent
CA 2265425
A 1.1 GHz fully integrated GaAs MESFET active inductor is presented. Both the inductance and loss resistance are tunable with the inductance independent of series loss tuning. The measured loss resistance is tunable over a -10.OMEGA. to +15.OMEGA. range with a corresponding change in inductance of less than 10 % at 100 MHz and less than 4% for frequencies above 500 MHz for capacitive tuning. The inductance is tunable from 65 nH to 90 nH. The measured loss resistance is shown to be do bias voltage tunable over a 0 to +10.OMEGA. range with an inductance tunable from 55nH to 110nH, with negligible interaction between loss resistance and inductance for frequencies from 100MHz to 1.1 GHz. Several embodiments using MESFETs and MOSFETs are described. A negative impedance converter is included to achieve increased bandwidth in all circuit realizations. Considerably larger bandwidths can be achieved depending on the fabrication technology employed and the intended application of the circuit.
Haslett James W.
Leifso Curtis
Lambert Anthony R.
Telecommunications Research Laboratories
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