Adhesion bond-breaking of lift-off regions on semiconductor...

Details Adhesion bond-breaking of lift-off regions on semiconductor... Adhesion bond-breaking of lift-off regions on semiconductor...

H - Electricity

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H01L 21/47 (2006.01) H01L 21/027 (2006.01) H01L 21/311 (2006.01) H01L 21/768 (2006.01) H05K 3/04 (2006.01)

Patent

CA 1192480

ABSTRACT OF THE DISCLOSURE ADHESION BOND-BREAKING OF LIFT-OFF REGIONS ON SEMICONDUCTOR STRUCTURES Abstract of the Disclosure A process is described for removing polyimide regions adhered to the surface of a semiconductor structure 10 which includes the steps of heating the structure 10 and the polyimide regions 12 to between 450°C and 490°C, immers- ing the structure in a solution of one of methylene chloride and ethylene diamine/hydrazine, and ultrasonerating the solution and the semiconductor structure.

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