Adhesion layer for platinum based sensors

Details Adhesion layer for platinum based sensors Adhesion layer for platinum based sensors

C - Chemistry, Metallurgy

23

C

117/157, 73/74,

C23C 14/16 (2006.01) C23C 14/08 (2006.01) G01F 1/68 (2006.01) G01F 1/684 (2006.01) H01C 7/00 (2006.01)

Patent

CA 2000030

ABSTRACT OF THE DISCLOSURE The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500-1000°C) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion layer, approximately 20 to 100 angstroms in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence. Moreover, incorporation of the thin metal oxide adhesion layer minimizes the development of structural defects, and results in significantly improved uniformity and control of platinum sensor/heater resistance characteristics.

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