Aging treatment for semiconductor gas sensor

Details Aging treatment for semiconductor gas sensor Aging treatment for semiconductor gas sensor

H - Electricity

01

L

356/117, 327/2.5

H01L 45/00 (2006.01) A47J 27/62 (2006.01) F24C 15/20 (2006.01) G01N 27/12 (2006.01) H05B 6/80 (2006.01)

Patent

CA 1171976

ABSTRACT OF THE DISCLOSURE A SnO2 semiconductor gas sensor for use in a cook- ing apparatus to detect the cooking condition is manu- factured through an aging treatment for stabilizing the operation of the SnO2 semiconductor gas sensor. In the aging treatment, the SnO2 semiconductor gas sensor is disposed in a gas ambience including a gas which corresponds to that developed in the cooking apparatus. More specifically, the gas ambience includes a dimethyl siloxane gas which is developed from a heated silicone compound. The gas ambience in the aging treatment is held at a high temperature, for example 150°C to 250°C, to provide the SnO2 semiconductor gas sensor with a resistance value and sensitivity which are stable even in the high temperature ambience to which the sensor is subjected when oven cooking is performed by the cook- ing apparatus.

376021

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