Algaas native oxide

Details Algaas native oxide Algaas native oxide

H - Electricity

01

L

H01L 21/316 (2006.01) H01S 5/20 (2006.01) H01S 5/22 (2006.01) H01S 5/40 (2006.01) H01S 3/025 (1990.01) H01S 3/18 (1990.01)

Patent

CA 2099385

A method of forming a native oxide from an aluminum-bearing Group 111-V semiconductor material is provided. The method entails exposing the aluminium-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 °C to convert at least a portion of said aluminum-bearing material to a native oxide character- ized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said alumi- num-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

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