Alignment target for electron-beam write system

Details Alignment target for electron-beam write system Alignment target for electron-beam write system

H - Electricity

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356/177

H01L 21/02 (2006.01) G03F 9/00 (2006.01) H01L 23/544 (2006.01)

Patent

CA 1195437

ABSTRACT An alignment target for an electron-beam direct write system is formed on a wafer of semiconductor material. First, a layer of silicon oxide is formed on a surface of the wafer. Then a layer of silicon nitride is formed on the oxide. Next, an opening is etched in the nitride layer to expose a surface portion of the oxide. The surface portion of the oxide is then etched to form a hole in the oxide. The hole is formed such that the oxide layer is undercut beneath the nitride layer such that a cantilevered nitride overhang is formed around the perimeter of the hole. A layer of aluminum is then deposited over the nitride layer.

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