All-metal, giant magnetoresistive, solid-state component

H - Electricity – 01 – L

Patent

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Details

H01L 23/48 (2006.01) G01R 33/09 (2006.01) G11C 11/16 (2006.01) H01F 10/32 (2006.01) H01L 21/8246 (2006.01) H01L 23/52 (2006.01) H01L 27/22 (2006.01) H01L 29/40 (2006.01)

Patent

CA 2252926

A solid-state component (200) is de- scribed which includes a network of thin-film elements (202). At least one thin-film element (202) exhibits giant magnetoresistance. The network (202) has a plurality of nodes (208, 210, 212, 214), each of which represents a di- rect electrical connection between two of the thin-film elements (202). First and second ones of the plurality of nodes (208, 210, 212, 214) comprise power terminals (208, 210). Third and fourth ones of the plurality of nodes (208, 210, 212, 214) comprise an output (212, 214). A first conductor (206) is inductively coupled to the at least one thin-film element (202) for applying a magnetic field thereto.

On décrit un composant monolithique (200) qui comprend un réseau d'éléments (202) à film mince. Au moins un élément (202) à film mince possède une magnétorésistance extrêmement élevée. Le réseau (202) comporte une pluralité de noeuds (208, 210, 212, 214) qui représentent chacun une connexion électrique directe entre deux des éléments (202) à film mince. Des premier et deuxième noeuds de la pluralité de noeuds (208, 210, 212, 214) comprennent des bornes (208, 210) de puissance. Des troisième et quatrième noeuds de la pluralité de noeuds (208, 210, 212, 214) comprennent une sortie (212, 214). Un premier conducteur (206) est couplé par couplage inductif à au moins un élément (202) à film mince afin d'appliquer sur ce dernier un champ magnétique.

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