C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/26 (2006.01) H01L 21/312 (2006.01) H01L 21/314 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01) H01L 29/00 (2006.01)
Patent
CA 2199347
This invention relates to a fluorine-containing amorphous carbon film with benzene rings distributed therein. The film is formed by plasma CVD while using an aromatic hydrocarbon gas and a fluoride gas as raw materials. This invention is also concerned with a semiconductor layer which features use of the fluorine-containing amorphous carbon film as an interlayer insulating film. The fluorine-containing amorphous carbon film has a low specific dielectric constant, does not contain much intrafilm water and is superior in heat resistance, so that the fluorine-containing amorphous carbon film permits application of a known conductive-pattern-forming process, which requires heat treatment at elevated temperature, and can provide a semiconductor device with reduced signal delays.
Pellicule de carbone amorphe renfermant du fluor et des noyaux benzéniques. La pellicule est formée par la technique plasma-CVD, avec comme matières premières un composé aromatique et un fluorure gazeux. L'invention porte également sur une couche semiconductrice, qui utilise la pellicule de carbone amorphe renfermant du fluor comme pellicule isolante intercouches. La pellicule de carbone amorphe renfermant du fluor a une constante diélectrique spécifique peu élevée, ne contient pas beaucoup d'eau et possède une résistance thermique supérieur; ladite pellicule permet ainsi l'application d'un procédé connu de conduction-structuration, qui nécessite un traitement thermique à haute température, et qui peut donner un dispositif semiconducteur à délais réduits pour les signaux.
Endo Kazuhiko
Tatsumi Toru
Corporation Nec
Smart & Biggar
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