Amorphous-containing semiconductor device with high...

Details Amorphous-containing semiconductor device with high... Amorphous-containing semiconductor device with high...

H - Electricity

01

L

356/162, 356/163

H01L 31/06 (2006.01) H01L 31/02 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1321660

Abstract of the Disclosure A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers; characterized in that (1) at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode, (2) an amount of dopant in a p-type or n-type layer is least at a junction interface of p/i or n/i and increases gradually toward a junction interface of p/electrode or n/electrode, or (3) a p-type semiconductor layer being the same conductive type as the p-type semiconductor and having higher impurity density and/or an n-type semiconductor layer being the same conductive type as the n-type semiconductor layer and having higher impurity density is/are interposed between the p-type semiconductor layer and the electrode at the side of the p-type semiconductor layer and/or between the n-type semiconductor layer and the electrode at the side of the n-type semiconductor layer. According to the semiconductor device of the present invention (in the case of (1) or (2)), large Voc and electric current at a specific voltage can be obtained, further in the case of (3), photoelectric convertion efficiency can be improved.

521602

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