Amorphous group iii-v semiconductor material and preparation...

Details Amorphous group iii-v semiconductor material and preparation... Amorphous group iii-v semiconductor material and preparation...

H - Electricity

01

L

H01L 21/203 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2703288

Reactive evaporation method for forming a group III-V amorphous material attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

L'invention porte sur un procédé d'évaporation réactive pour former une matière amorphe d'éléments des groupes III-V attachée à un substrat. Le procédé comprend les modes opératoires consistant à soumettre le substrat à une pression ambiante de pas plus de 0,01 Pa et introduire une matière active du groupe V à la surface du substrat à une pression de traitement entre 0,05 Pa et 2,5 Pa et une vapeur de métal du groupe III, jusqu'à ce qu'une couche de matière amorphe d'éléments des groupes III-V soit formée sur la surface.

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