Amorphous hydrogenated bipolar hetero-junction transistor

Details Amorphous hydrogenated bipolar hetero-junction transistor Amorphous hydrogenated bipolar hetero-junction transistor

H - Electricity

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H01L 29/06 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 21/331 (2006.01) H01L 29/04 (2006.01) H01L 29/08 (2006.01) H01L 29/73 (2006.01) H01L 29/737 (2006.01)

Patent

CA 1242035

ABSTRACT The bipolar hetero-junction transistor according to the present invention has a layer forming the emitter sub- stantially consisting of doped and hydrogenated semiconduc- tor material at least partly in amorphous form. A high current gain (.beta.) is obtained because a wide bandgap in the emitter material. Preferably the layer forming the emitter consists of microcrystalline silicon doped and hydrogenated, which renders a small base resistance being preferable for high frequency purposes. The amorphous bipolar hetero-junction transistor can be produced by CVD-technique, by using a plasma or by photodissociation. The transistor having a microcrystalline emitter layer can be produced by one of said methods or by heating an amorphous emitter layer.

491423

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