H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/185, 204/96.
H01L 29/36 (2006.01) H01L 21/383 (2006.01)
Patent
CA 1236933
12 ABSTRACT This invention discloses a new semiconductor Device having no step p-i-n junctions but has graded p-i-n junction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily in good reproducibility by plasma discharge method, it is especial- ly suited for use as a solar battery. An apparatus for the production of said semiconductor Device is also disclosed.
468353
Asai Kunio
Fukui Keitaro
Matsumura Mitsuo
Nakamura Osamu
Okayasu Yoshinobu
Robic Robic & Associes/associates
Toa Nenryo Kogyo K.k.
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