H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/23
H01L 31/02 (2006.01) H01L 21/205 (2006.01) H01L 29/04 (2006.01) H01L 31/20 (2006.01)
Patent
CA 1125896
ABSTRACT OF THE DISCLOSURE A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises depositing on a substrate a solid amor- phous semiconductor film including at least one element, by glow discharge decomposition of a compound containing said at least one element and at least one alterant element in an atmosphere separately containing at least one different al- terant element, wherein the plurality of different alterant elements comprise at least fluorine and are incorporated in said amphorous semiconductor film during the deposition thereof yielding an altered amorphous semiconductor material having reduced density of localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell application are obtained and modifiers or dopants can be effectively added to produce p-type or n-type amorphous semiconductor films so that the films function like similar crystalline semiconductors.
322800
Madan Arun
Ovshinsky Stanford R.
Energy Conversion Devices Inc.
Macrae & Co.
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