Amorphous silicon pin semiconductor device having a hybrid...

Details Amorphous silicon pin semiconductor device having a hybrid... Amorphous silicon pin semiconductor device having a hybrid...

H - Electricity

01

L

345/22

H01L 31/06 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1187588

ABSTRACT OF THE DISCLOSURE The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid construction. The hybrid construction is of advantage in providing an ability to control the optical band gap of the P and N layers resulting in increased photogeneration of charge carriers and device output.

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