Amorphous silicon semiconductor film and production process...

Details Amorphous silicon semiconductor film and production process... Amorphous silicon semiconductor film and production process...

H - Electricity

01

L

148/3.7

H01L 31/20 (2006.01) H01L 31/0232 (2006.01) H01L 31/028 (2006.01) H01L 31/075 (2006.01)

Patent

CA 1255195

ABSTRACT This invention discloses an amorphous silicon semi- conductor film comprising at least hydrogen, nitrogen and oxygen as impurities and the method to produce it. The film is characterized in that the total quantity of nitrogen and oxygen in said film is at least 1 atom %. Since the film has small light absorption coefficient and its optical refractive index is controllable, an excellent window material for solar ceil can be provided. As an adherence of the film with metal electrode as well as with transparent electrode is sufficient, the good reproducibility in making solar cell using the film of this invention as window material was realized.

468352

Affiliated with

Also associated with

Rating

Amorphous silicon semiconductor film and production process... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Amorphous silicon semiconductor film and production process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amorphous silicon semiconductor film and production process... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1191610