Amorphous silicon sensor

Details Amorphous silicon sensor Amorphous silicon sensor

G - Physics

01

N

358/32, 148/3.4

G01N 23/00 (2006.01) H01L 31/0232 (2006.01) H01L 31/108 (2006.01) H01L 31/115 (2006.01) H01L 31/20 (2006.01)

Patent

CA 2031628

AMORPHOUS SILICON SENSOR ABSTRACT A photosensor device includes doped and undoped hydrogenated amorphous silicon layers adjacent each other and sandwiched between a conductive layer on one side and a metal layer on the other side with the sensor having been annealed under a hydrogen atmosphere and exhibiting low dark currents. The photosensor device is particularly useful as an X-ray image sensing device with the addition of a luminescent layer having at least one X-ray phosphor.

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