Amplification system having mask detection and bias...

H - Electricity – 03 – F

Patent

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H03F 1/32 (2006.01) H03F 1/02 (2006.01)

Patent

CA 2286544

A method and apparatus for reducing out-of-band frequency components of an RF signal having a carrier frequency which is not know in advance employ a control signal to vary adjustable bias parameters of the circuit. In particular embodiments, the RF signal is generated from a MOSFET power amplifier, which introduces distortion components into its output signal. Bias parameters of the MOSFET amplifier can be varied to reduce out-of-band frequency components, that is, out-of-band distortion. In addition, other elements of the network can be controlled by varying bias parameters, for example, a predistorter.

Une méthode et un appareil permettant de réduire des composants de fréquence hors-bande d'un signal RF ayant une fréquence porteuse qui n'est pas connue à l'avance utilisent un signal de commande pour faire varier des paramètres de polarisation réglables du circuit. Dans des configurations particulières, le signal RF est généré à partir d'un amplificateur de puissance à transistor MOS, qui introduit des composants de distorsion dans son signal de sortie. Il est possible de faire varier les paramètres de polarisation de l'amplificateur à transistor MOS pour réduire les composants de fréquence hors-bande, c'est-à-dire la distorsion hors-bande. De plus, d'autres éléments du réseau peuvent être commandés en faisant varier des paramètres de polarisation; c'est le cas d'un dispositif de distorsion préalable, par exemple.

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