An efficient rf cmos amplifier with increased transconductance

Details An efficient rf cmos amplifier with increased transconductance An efficient rf cmos amplifier with increased transconductance

H - Electricity

03

F

H03F 3/195 (2006.01) H03D 7/14 (2006.01) H03F 1/02 (2006.01) H03F 3/345 (2006.01) H04B 1/26 (2006.01) H03D 7/12 (2006.01)

Patent

CA 2193153

An RF IC having an improved transconductance comprises a first active device of a first conductance type having a gate, a drain and a source and a second active device of a second conductance type having a gate, a drain and a source. The second active device is coupled in series with the first active device. The gate of the first active device is coupled to the gate of the second active device. A current reuse circuit is coupled to the first active device and the second active device wherein a current flowing from the drain ?he first active device is reused in the second active device. Whereby transconductance is increased without an increased current utilization and without an increase in noise.

L'invention est un circuit intégré RF à transconductance améliorée qui comporte un premier dispositif actif d'un premier type de conductance ayant une grille, un drain et une source, et un second dispositif actif d'un second type de conductance ayant une grille, un drain et une source. Le second dispositif actif est couplé en série avec le premier. La grille du premier dispositif actif est couplée à la grille du second. Un circuit de réutilisation du courant est couplé au premier dispositif actif et au second, de sorte que le courant sortant du drain du premier dispositif actif est réutilisé dans le second dispositif actif, ce qui produit une élévation de la transconductance sans qu'il soit nécessaire d'utiliser un courant plus intense et sans augmentation du niveau du bruit.

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