An electro-optic device

Details An electro-optic device An electro-optic device

G - Physics

02

F

G02F 1/025 (2006.01) G02F 1/015 (2006.01) G02F 1/313 (2006.01)

Patent

CA 2172278

The device comprises a layer of silicon (3) separated from a substrate (1) by a layer of insulating material (2). A rib (4) having an upper surface (4A) and two side surfaces (4B, 4C) is formed in the layer of silicon (3) to provide a waveguide for the transmission of optical signals. A lateral doped junction (7, 9, 8) is formed between the side surfaces (4B, 4C) of the rib (4) such that an electrical signal can be applied across the junction (7, 9, 8) to control the density of charge carriers across a substantial part of the cross-sectional area of the rib (4) thereby actively altering the effective refractive index of the waveguide.

Le dispositif comprend une couche de silicium (3) séparée d'un substrat (1) par une couche de matière isolante (2). Une nervure (4) ayant une surface supérieure (4A) et deux surfaces latérales (4B, 4C) est formée dans la couche de silicium (3) afin d'obtenir un guide d'ondes pour la transmission de signaux optiques. Une jonction dopée latérale (7, 9, 8) est formée entre les surfaces latérales (4B, 4C) de la nervure (4) de sorte qu'il est possible d'appliquer un signal électrique sur la jonction (7, 9, 8) afin de réguler la densité des porteurs de charge sur une partie substantielle de la section transversale de la nervure (4) et modifier l'indice de réfraction effectif du guide d'ondes.

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