An epitaxial wafer, a manufacturing method of the epitaxial...

Details An epitaxial wafer, a manufacturing method of the epitaxial... An epitaxial wafer, a manufacturing method of the epitaxial...

H - Electricity

01

L

H01L 21/465 (2006.01)

Patent

CA 2283532

The present invention provides a surface cleaning method of a II-VI compound semiconductor substrate wherein the density of crystal defects newly generated on the surface of the substrate when the epitaxial layer is grown which extend a large negative influence on the properties of a semiconductor device can be reduced, and wherein the surface of the substrate is mirror-like and exceedingly smooth and clean. This method comprises a process for removing the damaged layer on the surface of a II-VI compound semiconductor substrate and a process for etching the surface of the compound semiconductor substrate from which the damaged layer has been removed within a range of 0.01 to 3 µm using an etchant that contains at least Potassium dichromate, Sulfuric acid, and water.

Affiliated with

Also associated with

Rating

An epitaxial wafer, a manufacturing method of the epitaxial... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with An epitaxial wafer, a manufacturing method of the epitaxial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and An epitaxial wafer, a manufacturing method of the epitaxial... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1670589