An integrated rf switching cell built in cmos technology and...

Details An integrated rf switching cell built in cmos technology and... An integrated rf switching cell built in cmos technology and...

H - Electricity

03

K

H03K 17/74 (2006.01) H01L 27/06 (2006.01)

Patent

CA 2217595

An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-well resistor, parasitic capacitance and construction of the diode underneath a bonding input pad contribute to performance of the switch as well as saving space needed to construct the switch. 19

Diode CMOS intégrée à bague d'injection, permettant la construction d'un commutateur RF CMOS intégré. Des techniques de construction consistant à utiliser une résistance à puits n diffusés, une capacité parasite et une diode implantée sous une pastille de connexion d'entrée contribuent à l'efficacité du commutateur et économisent l'espace nécessaire à sa construction.

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