G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 11/21 (2006.01) G11C 5/02 (2006.01) G11C 11/4193 (2006.01) G11C 17/00 (2006.01)
Patent
CA 2424639
An intermesh memory device includes memory components that each have a determinable resistance value and electronic switches that each control current through one or more of the memory components such that a potential is applied to the memory components. A first electronic switch of the intermesh memory device is electrically coupled to an input of a memory component and a second electronic switch is electrically coupled to an output of the memory component. The first electronic switch and the second electronic switch are configured together to apply a potential to the memory component.
Fricke Peter
Koll Andrew
Van Brocklin Andrew L.
Hewlett-Packard Company
Sim & Mcburney
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