H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/082 (2006.01) H01L 29/73 (2006.01) H03K 17/66 (2006.01)
Patent
CA 2354522
The present invention relates to an integrated circuit bidirectional switch formed from bipolar transistor devices, in which the saturation voltage is sought to be reduced. More specifically, an integrated NPN bipolar transistor is formed with oxide insulation, and the normal direction of current flow is from the emitter to collector, and an integrated PNP bipolar transistor is formed with oxide insulation, and the normal direction of current flow is from the collector to emitter.
La présente invention concerne un commutateur bidirectionnel à circuit intégré formé par des dispositifs de transistors bipolaires, dans lesquels la tension de saturation doit être réduite. De manière plus spécifique, un transistor bipolaire NPN est formé d'une isolation d'oxyde, et selon une direction normale, le courant s'écoule depuis l'émetteur vers le collecteur. En outre, un transistor bipolaire PNP intégré est formé d'une isolation d'oxyde, et selon une direction normale, le courant s'écoule depuis le collecteur vers l'émetteur.
Goldman Richard
Miles David
Marks & Clerk
Telefonaktiebolaget Lm Ericsson
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