Anionically polymerizable monomers, polymers thereof, and...

C - Chemistry – Metallurgy – 08 – F

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402/8, 117/81, 2

C08F 130/04 (2006.01) C07F 7/10 (2006.01) C07F 7/28 (2006.01) C08F 130/08 (2006.01) C08F 136/14 (2006.01) C23C 16/00 (2006.01)

Patent

CA 2019669

ABSTRACT OF THE DISCLOSURE "Anionically Polymerizable Monomers, Polymers thereof, and Use of such Polymers in Photoresists" Anionically polymerizable monomers containing at least one silicon or titanium atom form polymeric photoresists having good dry etch resistance for use in microlithography. The monomers are of the formula Image I wherein A is -H or -CH=CH2; X is a strong electron withdrawing group; Y is a strong electron withdrawing group containing at least one silicon or titanium atom. Preferably Y is Image wherein n is 1-5 and R2, R3 and R4 are C1-C10 alkyl. A particularly preferred monomer is 3-trimethylsilylpropyl 2-cyanoacrylate. Methods for applying a resist coating by vapour deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed. The imaging layer may be applied over a planarizing layer to form a multilayer photoresist. Figure 2. -21-

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