Anisotropic etching of silicon and germanium

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

149/19, 148/3.2

H01L 21/306 (2006.01) C23F 1/40 (2006.01)

Patent

CA 954425

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Anisotropic etching of silicon and germanium does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anisotropic etching of silicon and germanium, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic etching of silicon and germanium will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-378410

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.