Anisotropic silicon etching in fluorinated plasma

Details Anisotropic silicon etching in fluorinated plasma Anisotropic silicon etching in fluorinated plasma

C - Chemistry, Metallurgy

30

B

148/3.2

C30B 33/00 (2006.01) H01L 21/3065 (2006.01) H01L 21/467 (2006.01)

Patent

CA 1260365

FI9-83-090 ANISOTROPIC SILICON ETCHING IN FLUORINATED PLASMA ABSTRACT A method of high rate anisotropic etching of silicon in a high pressure plasma is described. In one embodiment, the etching ambient is a mixture of either NF3 or SF6, an inert gas such as nitrogen, and a polymerizing gas such as CHF3 that creates conditions necessary for anisotropy not normally possible with nonpolymerizing fluorinated gases in a high pressure regime. The etch process is characterized by high etch rates and good uniformity utilizing photoresist or similar materials as a mask. The present process may advantageously be used to etch deep trenches in silicon using a photoresist mask.

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