Annealing of ion implanted iii-v compounds

Details Annealing of ion implanted iii-v compounds Annealing of ion implanted iii-v compounds

C - Chemistry, Metallurgy

30

B

148/3.4

C30B 33/00 (2006.01) H01L 21/324 (2006.01)

Patent

CA 1180256

ANNEALING OF ION IMPLANTED III-V COMPOUNDS Abstract of the Disclosure Thermal decomposition is reduced and stoichiometry is retained during annealing of a multiple element intermetal- lic semiconductor material by heating it in an environment with an excess of the most volatile constituent. In parti- cular, a GaAs wafer is annealed with a surface into which Si has been implanted while the surface is in proximity to InAs.

371106

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