Anodic etching method for the detection of electrically...

Details Anodic etching method for the detection of electrically... Anodic etching method for the detection of electrically...

H - Electricity

01

L

356/117

H01L 21/66 (2006.01) G01N 27/00 (2006.01) G01R 31/26 (2006.01)

Patent

CA 1069221

ANODIC ETCHING METHOD FOR THE DETECTION OF ELECTRICALLY ACTIVE DEFECTS IN SILICON Abstract of the Disclosure Electrically active defects, i.e., current-carrying defects or leakage paths in silicon crystals, are detected by an anodization process. The process selectively etches the crystal surface only where the electrically active defects are located when the anodization parameters are properly selected. Selected surface portions of the silicon structure are exposed to a hydrofluoric acid solution which is main- tained at a negative potential with respect to the silicon structure. When the potential difference is set to a proper value, etch pits are formed in the surface of the silicon only at those locations overlying electrically active defects which impact device yield. The defects are observed and counted to provide a basis to predict yield of desired semi- conductor devices to be formed later in the silicon structure.

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