Antifuse based on silicided single polysilicon bipolar...

Details Antifuse based on silicided single polysilicon bipolar... Antifuse based on silicided single polysilicon bipolar...

H - Electricity

01

L

H01L 29/72 (2006.01) H01L 21/331 (2006.01) H01L 23/525 (2006.01) H01L 27/082 (2006.01) H01L 27/102 (2006.01)

Patent

CA 2197627

An improved antifuse which employs the base-emitter junction of a silicided single polysilicon bipolar transistor. The distance between the base metal and emitter metal is shortened and results from self aligning process steps rather than lithographic steps, resulting in a lower and better controlled programming voltage, programming energy and ON state resistance. Typically the conductive filament formed in the new antifuse is about 0.65 microns long and is formed by a voltage pulse having a relatively slow rise time (e.g. 150 microseconds), resulting in improved properties which provide advantages in circuit design and in manufacturing circuits using the new antifuse.

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