Apparatus and method for balanced pressure growth of group...

Details Apparatus and method for balanced pressure growth of group... Apparatus and method for balanced pressure growth of group...

H - Electricity

01

L

H01L 21/18 (2006.01) H01L 21/203 (2006.01)

Patent

CA 2517584

An apparatus and a method for growth of Group Ill-V monocrystalline semiconductor compounds in a closed system with a balanced pressure maintained between the inside of a sealed ampoule and a pressure vessel. The vapor pressure 5 inside the sealed ampoule can be controlled by temperature, the amount of polycrystalline charge and an amount of material such as phosphorus inside the sealed ampoule. Filling and release of an inert gas is used to control the pressure in the pressure vessel.

La présente invention a trait à un appareil et un procédé pour la croissance de composés semi-conducteurs monocristallins de Groupes III-IV dans un système fermé à pression équilibrée maintenue entre l'intérieur d'une ampoule étanche et un appareil à pression. La pression de vapeur au sein de l'ampoule étanche peut être contrôlée par la température, la quantité de charge polycristalline et une quantité de matériau tels que le phosphore au sein de l'ampoule étanche. Le remplissage et la libération d'un gaz inerte est utilisé pour le contrôle de la pression dans l'appareil à pression.

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