H - Electricity – 01 – J
Patent
H - Electricity
01
J
356/176, 358/22
H01J 37/28 (2006.01) G01R 31/265 (2006.01) G01R 31/28 (2006.01) G01R 31/305 (2006.01) H01J 37/26 (2006.01)
Patent
CA 1236595
APPARATUS AND METHOD FOR DISPLAYING HOLE-ELECTRON PAIR DISTRIBUTIONS INDUCED BY ELECTRON BOMBARDMENT ABSTRACT An improved electron bombardment induced conductivity apparatus and method is described for charge collection imaging of semiconductor materials and devices with unprecedented resolution. This is accomplished by bombarding a very small area of the surface of a specimen with low-energy electrons rather than high-energy electrons and by physically scanning (i.e. moving) the electron source itself (rather than only the beam of electrons) with respect to the specimen. A very small area of the specimen surface is bombarded with low-energy electrons without any need to do focussing by emitting the low-energy electrons from a sharply pointed electrode positioned very close to the surface being bombarded with the low-energy electrons. While the pointed electrode is scanned over (and preferably at an essentially constant distance from) the surface of the specimen to be investigated, hole-electron pairs created by the electron bombardment are sensed (preferably collected by an electric field) and a measurement of the sensed number of such hole-electron pairs is displayed in synchronism with the electrode scanning to produce a charge collection image of the specimen, revealing structural or other characteristics thereof. The distance between the pointed electrode and specimen surface, as well as the diameter of the electrode tip, is preferably between 0.1 and 10 nanometers, and the voltage between the pointed electrode and the specimen surface is preferably between 1 and 10 volts.
505861
International Business Machines Corporation
Rosen Arnold
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