H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/77 (2006.01) C23C 14/04 (2006.01) H01L 21/768 (2006.01)
Patent
CA 2225446
A sputter deposition system and method comprises a vacuum system (36), target (44), collimator (46), and substrate (38). The target (44) is biased and sputtered to deposit a material layer onto the substrate (38) through the collimator (46). The substrate (38) can be biased to allow contemporaneous etching with deposition.
L'invention porte sur un système et un procédé de métallisation sous vide comprenant un système à vide (36), une cible (44), un collimateur (46) et un substrat (38). La cible (44) est polarisée et bombardée pour déposer une couche d'un matériau sur le substrat (38) en passant par un collimateur (46). Le substrat (38) peut être polarisé pour permettre son attaque en même temps que le dépôt.
Bulson Jeffry M.
Gittleman Bruce
Weiss Corey A.
Gowling Lafleur Henderson Llp
Materials Research Corporation
Sony Corporation
Tokyo Electron Limited
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