Apparatus and method for increasing breakdown voltage...

Details Apparatus and method for increasing breakdown voltage... Apparatus and method for increasing breakdown voltage...

H - Electricity

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H01L 23/58 (2006.01) H01L 23/62 (2006.01) H01L 23/64 (2006.01) H01L 29/739 (2006.01) H01L 29/74 (2006.01)

Patent

CA 2139072

The sensitivity of breakdown voltage to temperature and dV/dT induced currents is reduced in semiconductor power devices having a wide base transistor. The sensitivity is reduced by diverting current from the emitter of the wide base transistor to the base of the wide base transistor (an emitter short that does not reduce breakdown voltage) or by injecting a current into the base of the wide base transistor to its collector (an injected current that may lower the breakdown voltage, but no more than that related to temperature and capacitive current).

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