Apparatus and method for processing one or more wafers of...

Details Apparatus and method for processing one or more wafers of... Apparatus and method for processing one or more wafers of...

H - Electricity

05

B

309/86

H05B 6/00 (2006.01) C30B 33/00 (2006.01) G01J 5/00 (2006.01) G01J 5/04 (2006.01) H01L 21/00 (2006.01)

Patent

CA 2006762

21766-568 ABSTRACT Wafers having at least on one side a pattern of more and less conducting areas, are processed by the following steps. The wafer is transported into a space having a reflecting wall to which the patterned side is to be turned, and heated by means of a radiation source from the side opposite the patterned side. Measuring of the temperature of the wafer at the patterned side and at the reflecting wall is done through a radiation sensitive device or pyrometer. The apparatus has a connection for creating underpressure in the space. The reflecting wall is formed by stainless steel onto which is applied aluminium and optionally a layer of SiO2, the non-reflecting parts of the space or chamber comprising a layer of A12O3, optionally covered with SiO2.

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