H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/26 (2006.01) H01L 21/324 (2006.01) H01L 21/42 (2006.01) H01L 21/477 (2006.01)
Patent
CA 2518065
An apparatus and method of treating multiple wafers to reduce the density of impurities as well as to improve the uniformity of substrate electrical characteristics without any thermal stress. The wafers are chemically treated, and heat treated in a sealed reaction tube under arsenic overpressure with a controlled thermal profile to heat the wafers. The thermal profile controls temperature of different zones inside of a furnace containing the sealed reaction tube. Impurities of the wafers are dissolved, and are out-diffused from the inner portions to the outer portions of the wafers.
L'invention concerne un appareil et un procédé permettant de traiter de multiples plaquettes pour réduire la densité des impuretés ainsi que pour renforcer l'uniformité des caractéristiques électriques du substrat sans causer de contrainte thermique. Les plaquettes sont traitées chimiquement et thermiquement dans un tube de réaction hermétique sous surpression d'arsenic avec un profil thermique régulé afin de chauffer les plaquettes. Le profil thermique régule la température de différentes zones dans un four contenant le tube de réaction hermétique. Les impuretés des plaquettes sont dissoutes et diffusées vers l'extérieur, depuis les parties intérieures jusqu'aux parties extérieures des plaquettes.
Leung Charles
Young Morris
Zhang Davis
Axt Inc.
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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