Apparatus and process for growing crystals of semiconductor...

C - Chemistry – Metallurgy – 30 – B

Patent

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148/1.4

C30B 15/12 (2006.01)

Patent

CA 1305909

ABSTRACT OF THE DISCLOSURE An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure. The apparatus also includes at least one fluid passage for permitting the melted material to flow between the inner and outer crucibles when the multi-wall structure is defined by the inner and outer crucibles, a holder for holding the inner crucible, a heater disposed so as to surround the susceptor for heating the material in the crucible assembly, and a drive mechanism operable to move at least one of the holder and the susceptor vertically between a coupled position where the holder is supported by the susceptor in such a manner that the inner crucible is so placed within the outer crucible as to define the multi-wall structure and a released position where the holder is disengaged from the susceptor in such a manner that the inner crucible is released from the outer crucible. There is also provided a process which may be conveniently carried out in the apparatus described above.

568083

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