C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/1.2
C30B 15/18 (2006.01) C30B 15/02 (2006.01) C30B 15/10 (2006.01) C30B 15/12 (2006.01)
Patent
CA 1261715
Abstract of the Disclosure An apparatus for growing monocrystals of semiconductor material by the Czochralski technique using apparatus which includes a shallow-depth crucible in which the melt depth is maintained at a substantially constant level, with the ratio of melt depth to crucible diameter being maintained in the range of 0.019 to 0.250. A circular flat-plate heater underlies the crucible to maintain the temperature of the melt near the center of the crucible at a magnitude suitable for crystallization. A cylindrical dam within the crucible defines an annular volume into which the semiconductor material is fed and from which molten material flows inwardly toward the center where crystallization takes place. A further heater surrounds the crucible and is controlled to maintain the temperature in the outer, annular volume at a magnitude suitable for melting the semiconductor material. The rate of feed of granular material to the outer cylindrical volume is controlled to keep the volume of molten material in the crucible essentially constant.
484842
Borden Ladner Gervais Llp
General Signal Corporation
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